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Sandip Tiwari

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Sandip Tiwari
Sandip Tiwari

Sandip Tiwari is an Indian-born electrical engineer and applied physicist. He is the Charles N. Mellowes Professor of Engineering at Cornell University. His previous roles were Director of National Nanotechnology Users Network, Director of the National Nanotechnology Infrastructure Network, and research scientist at IBM T. J. Watson Research Center. He is best known for his pioneer research in the fields of SiGe transistor and nanocrystal memory.

Early life and education

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Sandip Tiwari was born in Ahmedabad, India, received his BTech from Indian Institute of Technology, Kanpur in 1976. He received his M.Eng. at Rensselaer Polytechnic Institute and PhD at Cornell University in 1980.[citation needed]

Work and academic career

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His early research career was at IBM's Research Division until 1999. During this period, he did the early work on compound semiconductor transistors and co-developed the first SiGe transistor.[1][2] He also pioneered various quantum and nanoscale devices, such as the nanocrystal memory.[3] The first demonstration of SiGe transistor was honored as IEEE International Electron Devices Meeting (IEDM) Top Industry Innovation of 1987.[citation needed] His work on nanocrystal memory was one of the 50 most-cited papers in the history of Applied Physics Letters in 2013.[4]

At Cornell University, his Nanoscale ElectroScience Research Group[5][6] focused on adaptive approaches for low power design,[7] three-dimensional integration,[8][9] inexact computing,[10] and Bayesian implementations[11][12]

Selected awards and honors

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Selected publications

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Books

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  • S. Tiwari, Quantum, Statistical and Information Mechanics: A Unified Introduction, Electroscience series, Vol. 1, Oxford University Press, ISBN 978-0-19-875985-0
  • S. Tiwari, Device Physics: Fundamentals of Electronics and Optoelectronics, Electroscience series, Vol. 2, Oxford University Press, ISBN 978-0-19-875984-3, (2022)
  • S. Tiwari, Semiconductor Physics: Principles, Theory and Nanoscale, Electroscience series, Vol. 3, Oxford University Press, ISBN 978-0-19-875986-7, (2020)
  • S. Tiwari, Nanoscale Device Physics: Science and Engineering Fundamentals, Electroscience series, Vol. 4, Oxford University Press, ISBN 978-0-19-875987-4 (2017)
  • S. Tiwari, Compound Semiconductor Device Physics, Academic Press, Inc., (1992) and Elsevier, ISBN 978-0-12-691740-6 (1992); Updated edition available as Open Text from group website

Papers

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References

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  1. ^ S.S. Iyer, G.L. Patton, S.S. Delage, S. Tiwari, J.M.C. Stork, "Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy", International Electron Devices Meeting (1987).
  2. ^ G.L. Patton, S.S. Iyer, S.L. Delage, S. Tiwari and J.M.C. Stork, “Silicon-Germanium Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy,” IEEE Electron Device Letters, EDL-9, No. 4, p. 165 (1988)
  3. ^ S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. Crabbe and K. Chan, “A Silicon Nano-Crystals Based Memory,” Applied Physics Letters, 68, p.1377, 4 Mar. (1996)
  4. ^ "Celebrating 50 Years of Applied Physics Letters" (PDF). Numse.nagoya-u.ac.jp. Retrieved 17 July 2022.
  5. ^ "Sandip Tiwari | Cornell Engineering". Engineering.cornell.edu.
  6. ^ "Nanoscale ElectroScience Research Group, ECE Cornell". electroscience.ece.cornell.edu.
  7. ^ J. Y. Kim, P. Solomon and S. Tiwari, “Adaptive Circuit Design Using Independently Biased Back-Gated Double-Gate MOSFETS,” IEEE Circuits and Systems I, 59 (4), Apr.., 806-819(2012)
  8. ^ L. Xue, C. C. Liu, H.-S. Kim, S (K) Kim, and S. Tiwari, “Three-Dimensional Integration: Technology, Use, and Issues for Mixed-Signal Applications,” IEEE Transactions on Electron Devices, 50, No. 3, 601-609(2003)
  9. ^ C. C. Liu, I. Ganusov, M. Burtscher, and S. Tiwari, “Bridging the Processor-Memory Performance Gap with 3D IC Technology,” IEEE Design and Test of Computers, Vol. 22, Nov., 556-564(2005)
  10. ^ J. Y. Kim and S. Tiwari, “Inexact Computing using Probabilistic Circuits: Ultra Low-Power Digital Processing”, ACM Journal of Emerging Technologies, Vol. 10, No. 2, Article 16, February (2014)
  11. ^ S. Tiwari and D. Querlioz, “On the physical underpinnings of the unusual effectiveness of probabilistic and neural computation,” Invited paper, Tech. Dig. of IEEE Int’l Conf. on Rebooting Computing, 1--4(2017)
  12. ^ "On the Physical Underpinnings of the Unusual Effectiveness of Probabilistic and Neural Computation - IEEE Rebooting Computing 2017". IEEE.
  13. ^ "IEEE CLEDO BRUNETTI AWARD : Recipients" (PDF). Ieee.org. Archived from the original (PDF) on December 16, 2021. Retrieved 17 July 2022.
  14. ^ "Past DAA Awardees". Iitkalumni.org.
  15. ^ "ISCS Young Scientist Award". Csw2018.org.
  16. ^ Tiwari, S. (March 15, 2002). "Introduction and information on editorial board". IEEE Transactions on Nanotechnology. 1 (1): 1–3. Bibcode:2002ITNan...1....1T. doi:10.1109/TNANO.2002.1005420 – via IEEE Xplore.
  17. ^ "Sandip Tiwari". Ethw.org. July 8, 2022.
  18. ^ Tiwari, Sandip (August 15, 2015). "Memories in the Future of Information Processing". Proceedings of the IEEE. 103 (8): 1247–1249. doi:10.1109/JPROC.2015.2448912.
  19. ^ "APS Fellow Archive". Aps.org.
  20. ^ "IEEE Fellows Directory - Member Profile". IEEE.
  21. ^ Tiwari, Sandip (August 15, 2015). "Implications of Scales in Processing of Information". Proceedings of the IEEE. 103 (8): 1250–1273. doi:10.1109/JPROC.2015.2448936. S2CID 12464832 – via IEEE Xplore.
  22. ^ Tiwari, Sandip; Rana, Farhan; Hanafi, Hussein; Hartstein, Allan; Crabbé, Emmanuel F.; Chan, Kevin (March 4, 1996). "A silicon nanocrystals based memory". Applied Physics Letters. 68 (10): 1377–1379. Bibcode:1996ApPhL..68.1377T. doi:10.1063/1.116085.
  23. ^ Tiwari, S. (March 15, 1988). "A new effect at high currents in heterostructure bipolar transistors". IEEE Electron Device Letters. 9 (3): 142–144. Bibcode:1988IEDL....9..142T. doi:10.1109/55.2069. S2CID 39623450 – via IEEE Xplore.
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